IEEE

A Fully Integrated Single-BJT-Based Temperature-to-Digital Converter Achieving ±0.23 °C (3σ) Over 2.0–5.5 V for Duty-Cycled Operation

Abstract: This paper presents a fully integrated temperature-to-digital converter (TDC) fabricated in a 0.18 μm CMOS process, employing a single bipolar junction transistor (BJT). The proposed ...
IEEE

A BJT-Based Temperature Sensor in 40-nm CMOS With ±0.8°C(3σ) Untrimmed Inaccuracy

Abstract: This paper presents a bipolar junction transistor (BJT) based temperature sensor in 40-nm CMOS process with improved untrimmed accuracy. By exploiting the relation between saturation current ...